Part Number Hot Search : 
THN5601B 05111 80C51 BZX84C47 BSV52L CM2324 2SK1486 TL062CN
Product Description
Full Text Search
 

To Download AS358M Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS General Description
The AS358/358A consist of two independent, high gain and internally frequency compensated operational amplifiers, they are specifically designed to operate from a single power supply. Operation from split power supply is also possible and the low power supply current drain is independent of the magnitude of the power supply voltages. Typical applications include transducer amplifiers, DC gain blocks and most conventional operational amplifier circuits. The AS358/358A series are compatible with industry standard 358. AS358A has more stringent input offset voltage than AS358. The AS358 is available in DIP-8, SOIC-8, TSSOP-8 and MSOP-8 packages, AS358A is available in DIP-8 and SOIC-8 packages.
AS358/358A
Features
* * * * * * Internally Frequency Compensated for Unity Gain Large Voltage Gain: 100dB (Typical) Low Input Bias Current: 20nA (Typical) Low Input Offset Voltage: 2mV (Typical) Low Supply Current: 0.5mA (Typical) Wide Power Supply Voltage: Single Supply: 3V to 36V Dual Supplies: 1.5V to 18V Input Common Mode Voltage Range Includes Ground Large Output Voltage Swing: 0V to VCC -1.5V
* *
Applications
* * * Battery Charger Cordless Telephone Switching Power Supply
SOIC-8
DIP-8
TSSOP-8
MSOP-8
Figure 1. Package Types of AS358/358A
Sep. 2006 Rev. 1. 6 1
BCD Semiconductor Manufacturing Limited
Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Pin Configuration
M/P/G/MM Package (SOIC-8/DIP-8/TSSOP-8/MSOP-8)
OUTPUT 1 INPUT 1INPUT 1+ GND 1 2 3 4 8 7 6 5 VCC OUTPUT 2 INPUT 2INPUT 2+
AS358/358A
Figure 2. Pin Configuration of AS358/358A (Top View)
Functional Block Diagram
VCC
6A
4A
100A
Q5 Q6 Q2 INPUTS + Q10 Q8 Q9 Q1 Q3 Q4 Rsc OUTPUT Cc Q7
Q11 Q12 50A
Q13
Figure 3. Functional Block Diagram of AS358/358A (Each Amplifier)
Sep. 2006 Rev. 1. 6 2
BCD Semiconductor Manufacturing Limited
Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Ordering Information
Circuit Type Blank: AS358 A: AS358A AS358
AS358/358A
E1: Lead Free Blank: Tin Lead TR: Tape and Reel Blank: Tube Package M: SOIC-8 P: DIP-8 G: TSSOP-8 MM: MSOP-8
Package
Temperature Range
Part Number Tin Lead AS358M Lead Free AS358M-E1 AS358MTR-E1 AS358AM-E1 AS358AMTR-E1
Marking ID Tin Lead AS358M AS358M Lead Free AS358M-E1 AS358M-E1 AS358AM-E1 AS358AM-E1 AS358P AS358P-E1 AS358AP-E1 EG3A EG3A AS358MM-E1 AS358MM-E1
Packing Type Tube Tape & Reel Tube Tape & Reel Tube Tube Tube Tape & Reel Tube Tape & Reel
SOIC-8
-40 to 85oC
AS358MTR
DIP-8
-40 to 85oC -40 to 85oC -40 to 85oC
AS358P
AS358P-E1 AS358AP-E1 AS358G-E1 AS358GTR-E1 AS358MM-E1 AS358MMTR-E1
TSSOP-8
MSOP-8
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Sep. 2006 Rev. 1. 6 3
BCD Semiconductor Manufacturing Limited
Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Absolute Maximum Ratings (Note 1)
Parameter Power Supply Voltage Differential Input Voltage Input Voltage Symbol VCC VID VIC DIP-8 SOIC-8 Value 40 40 -0.3 to 40 830 550 Unit V V V
AS358/358A
Power Dissipation (TA=25oC) Operating Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10 Seconds)
PD
TSSOP-8 MSOP-8
150 -65 to 150 260
500 470
mW
TJ TSTG TLEAD
oC oC oC
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter Supply Voltage Ambient Operating Temperature Range Symbol VCC TA Min 3 -40 Max 36 85 Unit V
oC
Sep. 2006 Rev. 1. 6 4
BCD Semiconductor Manufacturing Limited
Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Electrical Characteristics
Limits in standard typeface are for TA=25oC, bold typeface applies over -40oC to 85oC (Note 2), VCC=5V, GND=0V, unless otherwise specified. Parameter Symbol Test Conditions VO=1.4V, RS=0, VCC=5V to 30V AS358 AS358A Min Typ 2 2 Max 5 7 3 5 7 20 5 200 200 30 100 0 0.7 0.5 85 80 60 60 70 60 -120 20 20 10 5 12 50 40 26 26 27 27 5 20 30 mV 28 V 60 15 40 100 70 100
VCC -1.5
AS358/358A
Unit
Input Offset Voltage
VIO
mV
Average Temperature Coefficient of Input Offset Voltage Input Bias Current Input Offset Current Input Common Mode Voltage Range (Note 3) Supply Current Large Signal Voltage Gain Common Ratio Power Ratio Mode Supply Rejection Rejection
VIO/T TA=-40 to 85oC IBIAS IIO VIR ICC GV CMRR PSRR CS IIN+ or IIN-, VCM=0V IIN+ - IIN-, VCM=0V VCC=30V TA=-40 to 85oC, RL=, VCC=30V TA=-40 to 85oC, RL=, VCC=5V VCC=15V, VO=1V to 11V, RL 2k DC, VCM=0V to (VCC-1.5)V VCC=5V to 30V f=1kHz to 20kHz
V/oC nA nA V mA dB dB dB dB mA mA A mA
2 1.2
Channel Separation Source Output Current Sink Output Short Circuit Current to Ground
ISOURCE VIN+=1V, VIN-=0V, VCC=15V, VO=2V VIN+=0V, VIN-=1V, VCC=15V, VO=2V VIN+=0V,VIN-=1V,VCC=15V, VO=0.2V ISC VCC=15V VCC=30V, RL=2k VOH
ISINK
Output Voltage Swing VOL
VCC=30V, RL=10k VCC=5V, RL= 10k
Note 2: Limits over the full temperature are guaranteed by design, but not tested in production. Sep. 2006 Rev. 1. 6 5 BCD Semiconductor Manufacturing Limited
Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Electrical Characteristics (Continued)
Note 3: The input common-mode voltage of either input signal voltage should not be allowed to go negatively by more than 0.3V (at 25oC). The upper end of the common-mode voltage range is VCC-1.5V (at 25oC), but either or both inputs can go to +36V without damages, independent of the magnitude of the VCC.
AS358/358A
Typical Performance Characteristics
15
20 18 16
Input Voltage (+VDC)
10
Input Current (nA)
15
14 12 10 8 6 4 2
NEGATIVE
POSITIVE
5
0 0 5 10
0 -25 0 25 50
o
75
100
125
Power Supply Voltage (+VDC)
Temperature ( C)
Figure 4. Input Voltage Range
Figure 5. Input Current
1.0 0.9 0.8
120
105
Supply Current (mA)
0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 5 10 15 20 25 30 35 40
Voltage Gain (dB)
0.7
90
RL=2K RL=20K
75
60 0 8 16 24 32 40
Supply Voltage (V)
Power Supply Voltage (V)
Figure 6. Supply Current
Figure 7. Voltage Gain
Sep. 2006 Rev. 1. 6 6
BCD Semiconductor Manufacturing Limited
Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Typical Performance Characteristics (Continued) AS358/358A
120 110 100 90
4
Output Voltage (V) Input Voltage (V)
3 2 1 0 3 2 1 0 0 4 8 12 16 20 24 28 32 36 40
Voltage Gain (dB)
80 70 60 50 40 30 20 10 0 1 10 100 1k 10k 100k 1M
Frequency (Hz)
Time (s)
Figure 8. Open Loop Frequency Response
Figure 9. Voltage Follower Pulse Response
800 700
20
Output Voltage (mV)
600 500 400 300 200 100 0 4
Output Swing (V)
15
10
5
8
12
16
20
0 1k
10k
100k
1M
Time (s)
Frequency (Hz)
Figure 10. Voltage Follower Pulse Response (Small Signal)
Figure 11. Large Signal Frequency Response
Sep. 2006 Rev. 1. 6 7
BCD Semiconductor Manufacturing Limited
Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Typical Performance Characteristics (Continued) AS358/358A
8
10
Output Voltage Referenced to Vcc (V)
7 6 5 4 3 2 1 0 0.1 0.01 1E-3
Output Voltage (V)
1
VCC=5V
0.1
VCC=15V
1
10
100
0.01
0.1
1
10
100
Output Source Current (mA)
Output Sink Current (mA)
Figure 12. Output Characteristics: Current Sourcing
Figure 13. Output Characteristics: Current Sinking
100 90 80
Output Current (mA)
70 60 50 40 30 20 10 0 -25 0 25 50
o
75
100
125
Temperature ( C)
Figure 14. Current Limiting
Sep. 2006 Rev. 1. 6 8
BCD Semiconductor Manufacturing Limited
Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Typical Application
R1
AS358/358A
Opto Isolator
R6 VCC 1/2 AS358/A -
AC Line
SMPS
+
GND R7
Battery Pack
R3
R4
R5
Current R2 Sense
AZ431
VCC 1/2 AS358/A + GND R8
Figure 15. Battery Charger
R1 910K
R1 100k
R2 100K 1/2 AS358/A R3 91K VIN(+) + RL VO VCC
+V1 +V2 R2 100k R3 100k +V3 +V4 R4 100k R5 100k
+ 1/2 AS358/A R6 100k VO
Figure 16. Power Amplifier
Figure 17. DC Summing Amplifier
Sep. 2006 Rev. 1. 6 9
BCD Semiconductor Manufacturing Limited
Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Typical Application (Continued) AS358/358A
R1 100k C1 0.1F
R2 1M
+ 2V -
VCC + 2V -
1/2 AS358/A +
CO RB 6.2k R4 100k VCC R5 100k AV=1+R2/R1
R3 2K
R1 2K
R2
VO RL 10k
1/2 AS358/A + R4 3K I1 1mA I2
CIN AC
R3 1M
C2 10F
AV=11 (As shown)
Figure 18. AC Coupled Non-Inverting Amplifier
Figure 19. Fixed Current Sources
R1
1M
C1 0.01F
0.001F R2 100k 1/2 AS358/A + R3 100k VCC R4 100k R5 100k VO
R1 16K VIN
R2 16k + C2 0.01F 1/2 AS358/A R3 100k VO
VO 0 fO R4 100k fO=1kHz Q=1 AV=2
Figure 20. Pulse Generator
Figure 21. DC Coupled Low-Pass Active Filter
Sep. 2006 Rev. 1. 6 10
BCD Semiconductor Manufacturing Limited
Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Mechanical Dimensions DIP-8 Unit: mm(inch) AS358/358A
0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP
6
6
5
3.710(0.146) 4.310(0.170) 4
3.200(0.126) 3.600(0.142)
4
3.000(0.118) 3.600(0.142)
0.510(0.020)MIN
0.254(0.010)TYP 0.360(0.014) 0.560(0.022) 2.540(0.100) TYP 0.130(0.005)MIN
0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370)
R0.750(0.030) 3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370)
6.200(0.244) 6.600(0.260)
Sep. 2006 Rev. 1. 6 11
BCD Semiconductor Manufacturing Limited
Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) AS358/358A
4.700(0.185) 5.100(0.201) 7 1.350(0.053) 1.750(0.069)
0.320(0.013)
8
7
8
0.675(0.027) 0.725(0.029)
D
5.800(0.228) 6.200(0.244)
D 20:1
1.270(0.050) TYP
0.100(0.004) 0.300(0.012) R0.150(0.006)
0.800(0.031) 0.200(0.008)
1.000(0.039) 3.800(0.150) 4.000(0.157)
0 8
0.330(0.013) 0.510(0.020) 0.900(0.035)
1 5
R0.150(0.006)
0.190(0.007) 0.250(0.010)
Sep. 2006 Rev. 1. 6 12
BCD Semiconductor Manufacturing Limited
Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Mechanical Dimensions (Continued) TSSOP-8 Unit: mm(inch) AS358/358A
2.900(0.114) 3.100(0.122)
SEE DETAIL A
0.050(0.002) 0.150(0.006) 0.800(0.031) 1.050(0.041)
1.200(0.047) MAX
0.090(0.004) 0.200(0.008)
12 TOP & BOTTOM R0.090(0.004)
4.300(0.169) 4.500(0.177) 6.400(0.252) R0.090(0.004) TYP GAGE PLANE 0 8
0.400(0.016)
SEATING PLANE 0.190(0.007) 0.300(0.012) 1.950(0.077) TYP DETAIL A 0.250(0.010) TYP
0.450(0.018) 0.750(0.030) 1.000(0.039) REF
Sep. 2006 Rev. 1. 6 13
0.650(0.026) TYP
BCD Semiconductor Manufacturing Limited
Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS Mechanical Dimensions MSOP-8 Unit: mm(inch) AS358/358A
0.300(0.012)TYP 0.650(0.026)TYP
0.150(0.006)TY P
0.410(0.016) 0.650(0.026)
4.700(0.185) 5.100(0.201)
2.900(0.114) 3.100(0.122)
0 6
0.760(0.030) 0.970(0.038) 0.800(0.031) 1.200(0.047)
2.900(0.114) 3.100(0.122)
Sep. 2006 Rev. 1. 6 14
0.200(0.008)
0.000(0.000)
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others.
MAIN SITE BCD Semiconductor Manufacturing Limited
- Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
BCD Semiconductor Manufacturing Limited
- IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
REGIONAL SALES OFFICE
Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951, Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A


▲Up To Search▲   

 
Price & Availability of AS358M

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X